Open Access

The use of photolithography for metal interconnects below 0.2 μm continues to be unrivalled in resolution and precision as a fabrication technique in the microelectronic industry. Current photolithographic deposition of fine metal structures relies on the use of a photoresists. A photolithographic technique that deposits metallic copper after UV irradiation from a solution containing a copper complex has been envisioned as a suitable technique to avoid the use of a photoresist and to attain a more profitable process. In this study commercial complexes containing acetalycetone and hexafluoroacetlyacetone and synthesized copper complexes containing pyridine and catechol derivatives were tested and compared to improve the deposition efficiency of metallic copper by irradiation with UV light. Ab initio DFT was used to simulate the compounds structure, UV-Vis, IR spectrum and distribution of charge. Metallic copper has been successfully deposited and the irradiation time has been decreased, complete coverage of copper was achieved after 15 min of irradiation with UV-LED´s, using at least 50 times less concentration of copper complex than with commercial complexes. Copper complexes containing chloride and pyridine, and 4-tert-butyl catechol and pyridine showed the best deposition rates and higher quality of deposited material than β-diketonate complexes reported in literature.